TECHNOLOGY
Next-Generation Power Semiconductor Technology
SiC 1200V MOSFET
HEB is developing advanced power semiconductor devices including:
Super Junction MOSFET
8th / 9th Generation IGBT
PPAC Focus
We focus on optimizing PPAC through continuous innovation:
- Performance
- Area
- Power
- Cost
Our goal is to deliver high-efficiency, high-reliability solutions with superior power density and low power loss for industrial and automotive sectors.